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Session 88 :
Laser Processing for Display Manufacturing
Display Manufacturing

Friday, May 17 / 09:00 AM   - 10:00 AM / San Jose Convention Center, LL20A

Chair:
Greg Gibson, nTact, Dallas, TX US

Co-Chair:
Bradley Bowden, Corning Research and Development Corporation, Corning, NY US


88.1 - Distinguished Paper: Direct Laser Patterning of Glass Mask for Microdisplay Using GHz Bursts (9:00 AM - 9:20 AM)
  • Woohyun Jung, Hyungsik Kim, Konstantin Mishchik, Kisang Lee, Jekil Ryu, SeungJoo Lee, SeongHo Jeong, Cheol Lae Roh
    Samsung Display Yongin South Korea



  • To support high-resolution microdisplays, a direct laser patterning IR-fs optical system is implemented, operating in MHz and GHz burst modes for precise microdrilling of glass for an ultra fine mask. The fine hole-shaped pattern is produced at a minimum of 5µm pitch level for an ~0.6-inch area without sacrificing glass strength.
05/17/2024 9:00 AM 05/17/2024 9:20 AM America/Los_Angeles Direct Laser Patterning of Glass Mask for Microdisplay Using GHz Bursts To support high-resolution microdisplays, a direct laser patterning IR-fs optical system is implemented, operating in MHz and GHz burst modes for precise microdrilling of glass for an ultra fine mask. The fine hole-shaped pattern is produced at a minimum of 5µm pitch level for an ~0.6-inch area without sacrificing glass strength. San Jose McEnery Convention Center LL20A Woohyun Jung, Hyungsik Kim, Konstantin Mishchik, Kisang Lee, Jekil Ryu, SeungJoo Lee, SeongHo Jeong, Cheol Lae Roh
88.2 - Characteristics Analysis for Laser-Cutting Process of Multilayer Display Panels (9:20 AM - 9:40 AM)
  • Youngjin Oh, Hee-Cheol Im, Jinhyeong Kim, Hoyun Kang, Jaejin Pyun, Taehee Park, Gihan Leem
    Samsung Display Company Asan South Korea


  • Sangpil Park, Kuhyun Kang
    Samsung Display Vietnam Yen Phong Vietnam



  • This paper features analysis of the laser-cutting characteristics of pulse-transverse electrical discharge in gas at atmospheric pressure (TEA) CO2 and ultraviolet (UV) pulse-laser processing in multilayer display panels. Results show that the characteristics of multi-layer polymer cutting have different trends from those in a single-layer due to optical and thermal properties of each layer.
05/17/2024 9:20 AM 05/17/2024 9:40 AM America/Los_Angeles Characteristics Analysis for Laser-Cutting Process of Multilayer Display Panels This paper features analysis of the laser-cutting characteristics of pulse-transverse electrical discharge in gas at atmospheric pressure (TEA) CO2 and ultraviolet (UV) pulse-laser processing in multilayer display panels. Results show that the characteristics of multi-layer polymer cutting have different trends from those in a single-layer due to optical and thermal properties of each layer. San Jose McEnery Convention Center LL20A Sangpil Park, Kuhyun Kang
88.3 - Fast Selective Laser-Induced Etching and Asymmetric 3D Hologram Laser Beam for Narrow-Bezel Thin Display (9:40 AM - 10:00 AM)
  • Hyungsik Kim, Jeongho Kim, Konstantin Mishchik, Seunghoon Jang, Seyeon Hwang, Kisang Lee, Woohyun Jung, Junghwa You, Jekil Ryu, Seongho Jeong, Cheollae Roh
    Samsung Display Yongin South Korea



  • The paper discusses a fast selective laser-induced etching (SLE) process with three-dimensional (3D) hologram optics to reduce display bezel thickness. One-side selective etching with asymmetric 3D hologram laser beam satisfies requirements for mechanical strength with bezel thickness that is 100 µm shorter than wheel scribing and CNC grinding, while achieving an etch process rate of 10 µm/min.
05/17/2024 9:40 AM 05/17/2024 10:00 AM America/Los_Angeles Fast Selective Laser-Induced Etching and Asymmetric 3D Hologram Laser Beam for Narrow-Bezel Thin Display The paper discusses a fast selective laser-induced etching (SLE) process with three-dimensional (3D) hologram optics to reduce display bezel thickness. One-side selective etching with asymmetric 3D hologram laser beam satisfies requirements for mechanical strength with bezel thickness that is 100 µm shorter than wheel scribing and CNC grinding, while achieving an etch process rate of 10 µm/min. San Jose McEnery Convention Center LL20A Hyungsik Kim, Jeongho Kim, Konstantin Mishchik, Seunghoon Jang, Seyeon Hwang, Kisang Lee, Woohyun Jung, Junghwa You, Jekil Ryu, Seongho Jeong, Cheollae Roh