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Session and scheduling information are listed below. Select a session from the list and press "Go" to view the abstracts for that session.

Session 19 :
Micro Light-Emitting-Diode Displays
Wearable Displays ; Emissive Displays

Tuesday May 23 / 03:40 PM - 05:00 PM / Room 502A

Chair:
Qun Yan, Fuzhou University, Wallkill, NY USA

Co-Chair:
Ioannis Kymissis, Columbia University, New York, NY USA


19.1 - Invited Paper: Micro-LED Microdisplays by Integration of III-V LEDs with Silicon Thin Film Transistors (3:40-4:00)
0017-05-23 03:40:00 0017-05-23 04:00:00 America/San Franciscos Micro-LED Microdisplays by Integration of III-V LEDs with Silicon Thin Film Transistors Emissive micro-LED technologies have been a topic of recent interest because of demanding high-luminance displays. In particular, micro-LED displays can reach luminance levels > 1,000,000 cd/m2, which is important for see-through optical systems. We present a review of various micro-LED technologies and an overview of the micro-LED applying thin-film integration. Moscone Convention Center Room 502A Vincent Lee
19.2 - Invited Paper: Nitride Microdisplays and MicroLED Displays (4:00-4:20)
0017-05-23 04:00:00 0017-05-23 04:20:00 America/San Franciscos Nitride Microdisplays and MicroLED Displays Since their inception, III-nitride micro-size light emitting diode (µLED) has emerged as a promising display technology. This paper provides an overview on a decade progresses on realizing µLED related technologies. An brief overview of the development, applications and future perspectives of nitride microLEDs, microdisplays, and microLED based large area displays will be discussed.   Moscone Convention Center Room 502A Hongxing Jiang, Jingyu Lin
19.3 - Invited Paper: Enabling Technology for Stretchable LED Displays and Electronic Systems (4:20-4:40)
0017-05-23 04:20:00 0017-05-23 04:40:00 America/San Franciscos Enabling Technology for Stretchable LED Displays and Electronic Systems Applications such as analog watches, chip-based adder/multipliers, and sensor/display integrated systems show highly stable operation even under 15~20% tensile strain through the use of a rigid/soft strain-engineered stretchable PCB platform, inkjet-printed programmable routing interconnects with printed cross-overs, stable direct chip bonding, and modulus-gradient conductive core-shell structured vias. Moscone Convention Center Room 502A Yongtaek Hong, Byeongmoon Lee, Junghwan Byun, Eunho Oh, Hyungjong Kim, Sangwoo Kim
19.4 - Invited Paper: Emissive Displays with Transfer-Printed Microscale Inorganic LEDs (4:40-5:00)
0017-05-23 04:40:00 0017-05-23 05:00:00 America/San Franciscos Emissive Displays with Transfer-Printed Microscale Inorganic LEDs Transfer-printing with elastomer stamps can accurately and cost-effectively deposit large arrays of LEDs onto display substrates with 99.9% yield in a research environment.  Full-color passive-matrix flexible-displays with 254 pixels per inch on 130 um thickness plastic substrates are achieved with an optical transmission of 90%. Moscone Convention Center Room 502A Matthew Meitl, Erich Radauscher, Brook Raymond, Salvatore Bonafede, David Gomez, Tanya Moore, Carl Prevatte, Alin Fecioru, Antonio Jose Trindade, Christopher Bower
19.5 - Invited Paper: Low-Cost Micro-LED Displays for All Applications (5:00-5:10)
0017-05-23 05:00:00 0017-05-23 05:10:00 America/San Franciscos Low-Cost Micro-LED Displays for All Applications Micro-LED has been considered the ultimate of what emissive displays can offer. In theory, these displays should not have any of their predecessor challenges. However, the reality is different and several major challenges should be addressed prior to micro-LED makes a huge entry. Moscone Convention Center Room 502A Reza Chaji, Ehsan Fathi, Afshin Zamani
19.6 - Invited Paper: A Novel Process for Fabricating High-Resolution and Very Small Pixel-pitch GaN LED Microdisplays (5:10-5:20)
0017-05-23 05:10:00 0017-05-23 05:20:00 America/San Franciscos A Novel Process for Fabricating High-Resolution and Very Small Pixel-pitch GaN LED Microdisplays A new approach for fabricating high-brightness GaN microdisplays is proposed. The demonstration of feasibility is achieved with the production of 3 µm pixel pitch microLED arrays on silicon. Such LEDs have interesting electrical characteristics. This technology is therefore very promising for fabricating high brightness, ultra-high-resolution microdisplays needed for augmented reality Moscone Convention Center Room 502A Francois Templier, Lamine Benaissa, Bernard Aventurier, Christine Di Nardo, Matthew Charles, Anis Daami