Session and scheduling information are listed below. Select a session from the list and press "Go" to view the abstracts for that session.
Session
60
: MicroLED Epitaxy |
Emissive, Micro-LED, and Quantum-Dot Displays
|
Thursday, May 16 / 10:40 AM - 12:20 PM / San Jose Convention Center, 220C
Chair:
Jean-Jacques Drolet, Osram Opto Semiconductors, Regensburg, Germany
Co-Chair:
Lars Samuelson, Lund University, Lund, Sweden
60.1 - Invited Paper: Epitaxial, Scalable Nanowire Emitters and Photodetectors (10:40 AM - 11:00 AM)
-
Songrui Zhao
McGill University Montreal PQ Canada
-
Epitaxial semiconductor nanowires are not only appealing to miniaturized devices, but also scalable photonic platforms. In this talk, I will describe epitaxial nanowire-based surface emitting lasers and wavelength distinguishable photodetectors in the ultraviolet, which can be potentially applied to portable sensing and imaging systems, for extended environment awareness.
60.2 - NanoLEDs for Augmented-Reality Applications (11:00 AM - 11:20 AM)
-
Seth Coe-Sullivan
NS Nanotech Rolling Hills Estates CA US
-
Matthew Stevenson
NS Nanotech Ann Arbor MI US
-
Binh Le, David Laleyan
NS Nanotech Canada Montreal PQ Canada
-
Nanowire-based InGaN light-emitting diodes (nanoLEDs) have progressed to being the most efficient LEDs ever made at extremely small lateral sizes, and have the added benefits of highly directional emission and extremely narrow bandwidth. Augmented-reality headsets and other A/R display applications will require displays that combine these properties with low-cost and high-yield manufacturing.
60.3 - CMOS-Compatible MicroLED Epitaxy for Display Applications (11:20 AM - 11:40 AM)
-
Mark Furlong, Lewis Kastein, Rodney Pelzel
IQE Plc Cardiff United Kingdom
-
Hugues Marchand
IQE Plc Taunton MA US
-
Results from AlGaInP (red) microLED devices deposited by MOCVD on 200mm Ge substrates will be presented. Ge offers advantages that include ultra-low levels of bulk defectivity, superior mechanical strength, and cost competitiveness, a CMOS fab-compatible substrate that is a key to accessing high-volume manufacturing.
60.4 - Minimal Efficiency Degradation and Elevated Radiometric Power Density of Ultraviolet-A MicroLED with Homoepitaxial Structure (11:40 AM - 12:00 PM)
-
Yibo LIU, Feng Feng, Sing Hoi Kwok
Hong Kong University of Science and Technology Hong Kong Hong Kong
-
Guobin Wang
Chinese Academy of Sciences Suzhou China
-
Zhaojun Liu
Southern University of Science and Technology Shenzhen China
-
The authors investigate the optoelectronic characteristics of UVA microLEDs based on a homogeneously epitaxial structure on freestanding gallium-nitride (GaN) substrates. The device exhibits a central wavelength of 390 nm, positioned at the overlap of UVA and visible light spectra. It demonstrates an impressively low ideality factor of 1.49 at 2.86 V and a series resistance of 9.88 Ω beyond 3 V. Optically, the device shows virtually no wavelength shift across a wide current density range of 0.1-1000 A/cm2, indicating exceptional optical stability and color accuracy. The emitted light is typical purple, reaching an expansive color gamut of 115.3% of Rec.2020. Furthermore, the GaN-on-GaN structure, with its superior crystal structure and heat dissipation properties, results in a very low droop ratio in EQE. This ensures sustained high-power output at high current densities, showcasing great potential in applications such as 3D printing, maskless photolithography, and fluorescence tagging.
60.5 Late-News Paper: External Quantum Efficiency of All InGaN Polychromic MicroLEDs (12:00 PM - 12:20 PM)
-
Brendan Moran, Robert Armitage, Zhongmin Ren, Hee Jin Kim, Oleg Shchekin
Lumileds LLC San Jose CA US
-
The authors present the state of the art for microLED materials and devices including the latest external quantum efficiency results as a function of current density for Blue, Green, and Red InGaN and Red AlInGaP emitting materials at device sizes < 3 µm. Also discussed is the demonstration and performance characteristics of “polychromic” MicroLED devices that emit red, green, and blue wavelength light from a single LED mesa at sizes of < 10 µm.