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Session
36
: Quantum Dot Materials |
Emissive, Micro-LED, and Quantum-Dot Displays
|
Wednesday, May 15 / 10:40 AM - 12:00 PM / San Jose Convention Center, 220C
Chair:
Zhuo Chen, BOE Technology Group Co., Ltd., Beijing, China
Co-Chair:
Keunchan Oh, Samsung Display, Yongin, South Korea
36.1 - Invited Paper: Submicron Narrow-Band Phosphors in Luminescent Color Filters and Next-Generation MiniLED and MicroLED Displays (10:40 AM - 11:00 AM)
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James Murphy
GE Niskayuna NY US
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MiniLED- and microLED-based displays require color-conversion materials with high EQE and narrow emission peaks. Recent advancements in submicron narrow-band phosphors, which are being implemented in miniLED and microLED displays, and luminescent color filter displays due to their excellent optical performance and robust nature, will be presented.
36.2 - Pure-blue emissive Perovskite Nanoplatelets with face-down orientation (11:00 AM - 11:20 AM)
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Naoaki Oshita, Akito Masuhara
Yamagata University Yamagata Japan
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Satoshi Asakura
Ise Chemicals Corporation Tokyo Japan
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Motofumi Kashiwagi
Zeon Corporation Tokyo Japan
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Lead trihalide PeNCs (perovskite nanocrystals) have attracted attention as next-generation optical materials owing to their excellent optical properties. Here, the authors report quantum-confined blue-emitting PeNCs with superior optical properties obtained by preparing a hetero-epitaxial core-shell structure via ligand-assisted reprecipitation.
36.3 - Perovskite QDs – Essential for Color, Brightness, and Power (11:20 AM - 11:40 AM)
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Norman Luechinger
Avantama Ltd. Stafa Switzerland
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In this presentation the authors give an overview about their perovskite QD solutions for miniLED backlight films for LCDs and also in-pixel QD converters for microLED displays and QD-OLED displays. They discuss the advantages of their perovskite QDs for all of these different display technologies and corresponding QD deposition methods.
36.4 - CQD-Based Sensors for Large Format SWIR Imaging (11:40 AM - 12:00 PM)
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Dexi Kong, Zixiao Chen, Wenjie Zhong, Xiantao Liu, Haiyang Liu, Lin Zhou, Xiaojuan Wu, Chuncheng Che
Beijing BOE Optoelectronics Technology Co., Ltd. Beijing China
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Xiaosong Yu, Cheng Li
Beijing BOE Sensor Technology Co., Ltd. Beijing China
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Quantum dots have been rapidly developed in the display field, especially as photoluminescent color conversion layers. At the same time, quantum dots have also made increasing research progress in the detection field. We reported a short-wave infrared sensor based on colloidal quantum dot technology. The photosensitive layer of the sensor uses HgTe colloidal quantum dot material. The detection band is 0.9~1.7um, the resolution is 1280*1024, and the pixel pitch is 15um. Colloidal quantum dot short-wave infrared sensors get rid of the limitations of the indium pillar flip-chip bonding process of traditional indium gallium arsenide CMOS short-wave infrared focal plane sensors. The preparation process is simple, the yield is higher, and the cost is low. Based on the colloidal quantum dot short-wave infrared sensor, a short-wave infrared movement module was implemented and the short-wave infrared image was successfully captured.