Session and scheduling information are listed below. Select a session from the list and press "Go" to view the abstracts for that session.
Poster Session :
Emissive, Micro-LED, and Quantum-Dot Displays Posters
Thursday, May 16, 2024, 5:00 PM โ 8:00 PM / San Jose Convention Center, Room 220A
P.138 - Color Demura for LTPS-TFT MicroLED Displays
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Bojia Lyu, Xiaojun Guo
Shanghai Jiao Tong University Shanghai China
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Wei Wu, Shuang Zhao
Shanghai Tianma Microelectronics Co., Ltd. Shanghai China
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Zhongwang Huo
Radiant Vision Systems (Shanghai) Co., Ltd. Suzhou China
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A loop iterative approach is employed to gradually get closer to the actual red/green/blue color coordinates and brightness ratio, under a given grayscale, to realize the brightness and chromaticity compensation (color demura) for a microLED display. The highest improvement of brightness uniformity and chromaticity non-uniformity achieved is >95% and <1JNCD, respectively, by verifying a 9.38-in. 480 x 960 resolution microLED display.
P.139 - Effect of Surface Ligands on Device Performance for Infrared Light-Emitting Diodes
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Minh-Son Hoang, Chiao-Fang Hsu, Hsueh-Shih Chen
National Tsing Hua University Hsinchu Taiwan Roc
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Infrared-emitting (IR) quantum dots (QDs) present the unique feature of tuning energy levels by ligand exchange. The ligand of QDs is modified to form the charge transport layer of IR light-emitting diodes (LEDs). IRLEDs fabricated with all QD materials achieve an electroluminescence (EL) peak of 1200 nm, including wide full-width-at-half-maximum (FWHM), and an EQE of 4.5%.
P.140 - The Miniaturization of InGaN/GaN MicroLEDs for MicroDisplays โ Size Effects, Frequency Dispersion, and Compact Modeling
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Yujia Gong, Pujian Lin, Lian-Mao Peng, Jiahao Kang
Peking University Beijing China
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Liang Zhang, Ze Yuan
Yongjiang Laboratory Ningbo China
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InGaN/GaN green micro-light-emitting diode (µLED) arrays with varying device sizes down to 4 µm are fabricated and characterized. A universal and comprehensive compact model for µLEDs is built, covering the capacitance frequency dispersion and size scaling effects. It reveals the significance of frequency in the display driving strategy and enables a design for µLED microdisplay applications including augmented/mixed reality (AR/MR).
P.141 - Ultrafine-Pitch AlGaN Ultraviolet-C MicroLED Displays for Quantum-Dot Color Conversion
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Feng Feng, Yibo Liu, Zichun Li, Zhaoyong Liu, Hoi-Sing Kwok
Hong Kong University of Science and Technology Hong Kong Hong Kong
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Yujia Sheng, Jr-Hau He
City University of Hong Kong Hong Kong Hong Kong
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Zhaojun Liu
Southern University of Science and Technology Shenzhen China
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Aluminum gallium nitride (AlGaN) ultraviolet-C (UV-C) micro-light-emitting diodes (microLEDs) offer numerous advantages in display applications, such as convenience, cost savings, and environmental friendliness. Achieving the desired high efficiency and large-scale displays with ultra-fine pixels requires significant advancements. The authors demonstrate AlGaN UV-C microLED screens and microdisplays incorporating quantum-dot color conversion, showing the potential to revolutionize the full-color display industry.
P.142 - Confocal Photoluminescence and Electroluminescence of Blue InGaN/GaN Nanorod Light-Emitting Diodes with Different Passivation Approaches
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Quang Trung Le, Youngwook Shin, Byeong-U Bak, Jun-Seok Hwang, Jaekyun Kim
Hanyang University Ansan South Korea
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Several sidewall passivation strategies on InGaN/GaN blue nLED are studied, including thermal ALD and PEALD Al2O3. The characterization of temperature and laser excitation-dependent photoluminescence (PL) and time-resolved photoluminescence (TRPL) are observed to determine the efficiency. A sidewall passivated-nLED device is fabricated and characterized, exhibiting extremely high brightness, even at low operation current.
P.143 - Enhanced Carrier Transportation Toward High Luminescent Light-Emitting Diodes with Multi-Cation Perovskite
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Huayan Liu
Shenzhen Technology University Shenzhen China
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Yongwei Wu
TCL China Star Optoelectronics Technology Co. Ltd. Shenzhen China
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In this work, more conductive and lower work function PEDOT:PSS 1,000 was used as a hole transporting layer to fabricate high luminescent perovskite light-emitting diodes. Combined with potassium doping strategy, the according MAxCs1-xPbBr3 (0?x?1) perovskite light-emitting diode reaches a high brightness of 65,000 cd/m2.
P.144 - High Efficiency MIP with External DBR Package
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Qi Fan, Jiawei Zhao, Xueqiao Li, Junjie Ma, Lili Jia
BOE MLED Technology Co., Ltd. Beijing China
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A new type of microLED in package (MIP) chips are designed, which have higher light extraction efficiency (LEE) by adding an external distributed Bragg reflector (DBR) so that the EQE of the MIP is increased. Such MIP chips enable miniLED displays with high brightness and low power consumption.
P.145 - The Impact of Packaging Film Structure on the Color Seam of MiniLED Displays
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Zezhou Yang, Liangliang Jin, Le Zhao, Ruoyu Ma, Shubai Zhang, Wenjia Sun, Jiaxin Li, Yueqiao Li, Jun Guan, Xiangyi Chen, Lingyun Shi
BOE MLED Technology Co., Ltd. Beijing China
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When viewing a miniLED display screen from a large angle, the color seam appearing at the edge of the module can disrupt the uniformity of the entire screen's bright state. The problem is resolved by optimizing the packaging film structure to improve the bright visual effect.
P.146 - Research on Optical Model of Quantum-Dot Color Conversion and Blue Backlight Device Architecture
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Ying Cui, Linlin Wang, Yongqi Shen, Juanjuan You, Menghua Bian, Yue Zhang, Chunjing Hu, Wei Quan, Bin Bo, Donghui Yu, Li Sun, Huai-Ting Shih, Jianwei Yu
Hefei BOE Joint Technology Co., Ltd. Hefei China
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Shoulei Shi, Guang Yan
BOE Technology Group Co., Ltd. Beijing China
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A full-view optical model of QD conversion and blue backlight device architecture is established. The model outputs the spectral information in the front view and predicts the spectral information of the QD color conversion device in different views. The optical model also considers the effects of QD concentration, thickness, particle size, and refractive index on the luminous efficiency.
P.147 - Highly Efficient Pure-Blue ZnSeTe-Based Quantum-Dot Light-Emitting Diodes with Top-Emitting Structure
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Shuangshuang Shi, Maocheng Jiang, Jingwen Feng, Dong Li, Chen Pei, Li Zhou, Zhuo Chen, Yanzhao Li, Xinguo Li, Xiaoguang Xu
BOE Technology Group Co., Ltd. Beijing China
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The application of non-Cd quantum dots in future display technologies is promising due to their environmental friendliness. However, their low efficiency and broad emission linewidth limit their practical usage. Here, the authors report the fabrication of a blue light-emitting diode (QLED) based on ZnSeTe quantum dots with different amounts of Te doping and top-emitting structure. By adjusting the thickness of the electron transport layer, they achieve electrical and optical balance control in the QLED. Ultimately, they obtain a blue QLED with a peak emission wavelength of 461 nm, a luminous efficiency of 5.8 cd/A, and pure-blue chromaticity coordinates of (0.13, 0.08).
P.148 - TBP-Assisted Synthesis of High-Concentration Quasi-Type II CdSe/CdS Dot-in-Rod Nanocrystals with Chirality Study
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Jiaxin Ling, Zhiqin Lin, Liguo Chen, Yijing Sun, Haodong Tang, Junjie Hao
College of Integrated Circuits and Optoelectronic Chips, Shenzhen Technology University Shenzhen China
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Ziming Zhou
Institute of Advanced Displays and Imaging, Henan Academy of Sciences Zhengzhou China
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Xijian Duan
Institute of Nanoscience and Applications and Department of Electrical and Electronic Engineering, Southern University of Scienc Shenzhen China
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Bingxin Zhao
The Theory Tech. Co., Ltd. Shenzhen China
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Binqian Zhou, Simin Cheng, Yiwen Li, Jiaji Cheng
School of Materials Science and Engineering, Hubei University Wuhan China
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Bing Xu
Shenzhen Planck Innovation Technologies Co. Ltd Shenzhen China
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The authors present a novel tributyl phosphine (TBP)-assisted synthesis method for green-emission CdSe/CdS DRs, which exhibit ligand-induced chiral activity no less than red-emitting. The CD g-factor can reach 1.3 × 10-3, coupling with excellent circularly polarized luminescence (CPL) activity (glum 5 × 10-4). This achievement will lay the foundation for the realization of full-color CPL.
P.149 - The Optical Taste of MLED Display: From the Mini-/MicroLED Optical Property to the Design of Pixel Circuits
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Yunni Chen, Zhou Zhou, Fancheng Liu, Guowei Zha, Jianfeng Yuan
Wuhan China Star Optoelectronics Technology Co., Ltd. Wuhan China
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In this paper, two pitch-0.6mm MLED displays with pulse hybrid modulation (PHM) and pulse amplitude modulation (PAM) driving mode separately are proposed. Influences of the intrinsic optical characteristics of miniLED and microLED on the design of MLED display pixel circuits are discussed. Surface brightness distributions of different gray scale are evaluated in particular.
P.150 - Study of Hexagonal Structure and Microlens with Anti-Reflection Design Improving MicroLEDs' Normal Luminance
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Chia Ching Lin, Hoang Yan Lin, Mao Kai Huang, Yuan Zhen Zhuang
National Taiwan University Taipei Taiwan Roc
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Yu Hsin Huang, Kuan-Heng Lin
National Taiwan University Hsinchu Taiwan Roc
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LEDs' luminous efficiency is investigated and optimized in different configurations. The simulation shows that loss is reduced from 40.06% to 18.51% with a hexagonal structure, and the ambient light reflection is reduced from 25.41% to 4.78%. With the addition of a microlens array, loss can be further reduced to 2.67%, and ambient light reflection reduced to 5.34%.
P.151 - Optimization of Quantum-Dot Color Filter for Flexible Display Applications
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Bingxin Zhao
The Theory Tech. Co., Ltd. Shenzhen China
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Depeng Li, Shang Li, Xue Bai, Xiao Wei Sun
Southern University of Science and Technology Shenzhen China
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Junjie Hao
Shenzhen Technology University Shenzhen China
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A flexible, uniformly dispersed quantum-dot (QD) color filter (QDCF) is fabricated for microLEDs by photolithography. The condition of PET films and concentration of QDs are studied. The optimized QDCF exhibits high quantum yield (QY) up to 70%, and a high optical density (OD) of over 1.2. The QY increases and then decreases with increasing concentration.
P.152 - Method of QD Color Conversion Layer and Patternable Encapsulation with High-Thickness BM Fabricated by Inkjet-Printed Process
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Chien Chang Hung, Shu Tang Yeh, Yi Hao Peng, Ming Chin Li, Jia Chong Ho, Kuang Jung Chen
Industrial Technology Research Institute Hsinchu Taiwan Roc
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A novel black-matrix (BM) QD color-conversion layer (CCL) structure based on inkjet printing is presented. The surface energy of the CLL is adjusted to control the thickness profile and improve the color-conversion efficiency. The CCL reliability is verified under stress for 240 hours at 60 and 90%RH.
P.153 - 8-in. Zero-Defect Germanium Wafers for AlGaInP ยต-LEDs
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Bendix De Meulemeester, Kristof Dessein, Johannes Vanpaemel, Annick Peetermans
Umicore Olen Belgium
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8-in. Ge wafers are developed as the starting substrate for lattice-matched hetero-epitaxially grown As-free AlGaInP layers for 650nm red microLEDs. Results of germanium 8-in. 0EPD crystals and low LPD/COP wafers from the authors' pilot 8-in. wafer line are measured. A comparison between Si, GaAs, and Ge is presented.
P.154 - Enhanced Thermal Stability and High Color Accuracy in GaN-on-GaN Homoepitaxy MicroLEDs
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Zichun Li
Hong Kong University of Science and Technology Hong Kong Hong Kong
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MicroLED displays promise significant visual benefits over existing display technologies. Current density and temperature effects on the emission spectra of microLEDs made on GaN and sapphire substrates are compared. Specifically, the luminance degradation at higher temperature is reported. A clear advantage is reported for GaN substrates over sapphire substrates.
P.155 - High-Resolution Patterning of Electroluminescent Quantum-Dot Pixels via Photo-Crosslinking
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Jeehye Yang, Kyung Sig Lee, Juoh Nam, Seunghee Jang, Jae Bok Chang, Chulsoon Park, Taek Joon Lee, Jaekook Ha, Yeo-geon Yoon, Changhee Lee
Samsung Display Yongin South Korea
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Hyeokjun Kim, Moon Sung Kang
Sogang University Seoul South Korea
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The emergence of near-eye displays for extended reality has promoted the development of high-resolution electroluminescence quantum-dot (EL-QD) devices. Direct photo-lithography using photosensitive moieties is an effective technique for producing microscale patterns of colloidal QDs. Red, green, and blue QD patterns are demonstrated with a resolution of >4,000 pixels per inch using an azide-based photo-crosslinking method.
P.156 - Efficiency Improvement Mechanism Analysis of Sidewall Passivation GaN-Based MicroLEDs by Atomic Layer Deposition
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Mengyuan Zhanghu, Zhaojun Liu
Southern University of Science and Technology Shenzhen China
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Yibo Liu
The Hong Kong University of Science and Technology hongkong China
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Sidewall passivation using atomic layer deposition (ALD) can efficiently improve external quantum efficiency (EQE). Such treatment increases EQE primarily by curtailing surface recombination. IQE is highly correlated with the microLED’s ideality factor. The mechanism of ALD sidewall passivation enhancement of device performance is analyzed using both electrical and optical performance improvements.
P.158 - Highly Flexible InP-Based Quantum-Dot Light-Emitting Diodes Fabricated on Heat-Dissipating Al-Coated PEN Substrate
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Hansol Seo, Geun Woo Baek, Taesoo Lee, Jeonghun Kwak
Seoul National University Seoul South Korea
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Flexible quantum dot LEDs (QLEDs) with outstanding optoelectronic properties have garnered attention for displays. However, flexible QLEDs face challenges of poor heat dissipation of plastic substrates. A novel flexible substrate (Al-coated polyethylene naphthalate) is proposed for top-emitting QLEDs with InP-based QDs. This approach results in improved heat dissipation during the operation, leading to improved device performance.
P.159 - Enhanced Color-Conversion Efficiency of Quantum-Dot Displays Based on Organic-Inorganic Composite as Scatterers and Cholesteric Liquid-Crystal Layer as Reflectors
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HaYoung Jung, YeonJin Han, SeungJai Kim, JiSoo Kim, MinSu Kim, SeungHee Lee
JeonBuk National University Jeonju South Korea
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Junho Jung
LG Display Paju South Korea
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In quantum-dot organic light-emitting diodes (QD-OLEDs), blue-light leakage must be minimized. Additionally, external light can cause green and red appearance even in the black condition. Liquid-crystal droplets are proposed for improving color conversion and nozzle unclogging. Further, a cholesteric LC layer is added to selectively reflect external UV and blue light.
P.160 - Improving MicroLED Efficiency by p-Contract Optimization
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Yizhou Qian, En-Lin Hsiang, Shin-Tson Wu
University of Central Florida Orlando FL US
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Yu-Hsin Huang, Kuan-Heng Lin
AU Optronics Corp. Hsinchu Taiwan Roc
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A blue InGaN/GaN CPC microLED with metallic sidewall can achieve a higher efficiency based on the dipole cloud model in FDTD and electrical model in TCAD. By merely optimizing the p-GaN contact size, the EQE is improved by 8.7%. Such a method helps to achieve high brightness with a lower power consumption.
P.161 - Full-In-Situ Imaging and Laser Processing System Supporting Detection and Removal of Defective Micro-LED Dies During Mass Transfer
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Yuxuan Cao, Kuai Yang, Zhen Zhang
Tsinghua University Beijing China
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Mass transfer of Micro-LEDs being the key to achieving mass production of Micro-LED displays. A novel in-situ observation, imaging, and laser processing system is proposed, enabling online, in-situ, and zero misalignment removal of faulty dies during the mass transfer process, improving the efficiency of mass transfer for Micro-LED displays.
P.162 - Green Solvent for Fabricating Inverted QD-LED
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Hyo-Bin Kim, Eun-young Choi, Jae-In Yoo, Sung-Cheon Kang, Jang-Kun Song
Sungkyunkwan University Suwon South Korea
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All-solution processed quantum-dot light emitting diode have several advantages for display technology. However, it is dark side to use environmentally hazardous organic solvents in the hole transport layer (HTL). In this study, we report a new methodology for finding environmentally friendly solvents, that have good performance, and have solution processability.
P.163 - A Novel Method for Evaluating Short-Range Uniformity of MicroLED Displays
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Yingteng Zhai, Yuqi Hu
Tianma Advanced Display Technology Institute (Xiamen) Co., Ltd. Xiamen China
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Xi Li, Bojia Lyu
Shanghai Tianma Microelectronics Co., Ltd. Shanghai China
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Zhiyang Hao
Nanjing University Nanjing China
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The authors propose a novel method for evaluating short-range uniformity. It is used to compare the performance of a microLED display driven by the PAM method and the PAM+PWM hybrid method respectively. The results show that the PAM+PWM hybrid-driving method has significant performance advantages, which correspond to the subjective visual feeling.
P.164 - Highly Efficient Quantum-Dot Light-Emitting Diodes Enhanced via Ultraviolet Postprocessing
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Huanyu Ma, Zhigao Lu, Xiaoyuan Zhang, Yang Liu, Dong Li, Zhuo Chen, Yanzhao Li, Xinguo Li, Xiaoguang Xu
BOE Technology Group Co., Ltd. Beijing China
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Low efficiency and stability due to unbalanced carrier injection are urgent problems in inorganic quantum-dot light-emitting diodes (QLEDs). To address these issues, a device is irradiated with ultraviolet light, which improves the interface contact between MoO3 and Mg:Ag. This results in a smaller electron potential barrier, increased hole injection, and more balanced carrier injection in the device. Ultimately, the device efficiency is improved by 154% compared to the pristine device, and the operating lifetime of the device is increased by ~91-fold.
P.221 - All Inkjet-Printed Inverted Electroluminescent Quantum-Dot Light-Emitting Diode Display Based on Metal-Oxide Thin-Film Transistors
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Jiyoon Kim, Hyeonsik Kim, Yool Guk Kim, Heewoon Im, Yuk-Hyun Nam, Sangho Lee, Jaehyun Park, Jaekook Ha, Yeo-Geon Yoon, Changhee Lee
Samsung Display Co., Ltd. Yongin South Korea
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A 12.4-in. inverted Cd-free electroluminescent quantum-dot (QD) light-emitting diode (LED) display panel based on metal-oxide thin-film transistors (TFTs) is demonstrated. The backplane of the panel is fabricated using 14 steps of photolithography processes, and pixel and scan driver circuits are composed by n-type indium-gallium-zinc oxide TFTs. Each pixel has an internal compensation circuit that compensates the threshold voltage of its own driving TFT. Since these QD LEDs have inverted structures, electroluminescent layers from the electron-injection layer to the hole-injection layer are constructed by sequential inkjet-printing processes. This inverted electroluminescent QD-LED display based on metal-oxide TFTs is a very promising structure for premium large-format displays due to its superb performance and cost-effectiveness.
P.261 Late-News Poster: Highly Efficient Color Conversion Layers Using Organic Nano-dots
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Rasheeda Ansari, Hyuk Kwon Jang
Kyung Hee University Seoul South Korea
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In this study, we report color conversion layers (CCLs) developed by new organic nano-dots (ONDs). These ONDs, comprised of organic fluorescent materials and surfactant molecules, offer unique advantages such as tunable optical properties, high (100%) photoluminescence quantum yield (PLQY), and narrow (25-35 nm) full-width at half-maximum (FWHM). Compared to the inorganic (InP) reference CCLs, OND CCLs exhibit almost double (80-85%) color conversion efficiencies with good photo and thermal stability.