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Poster Session :
Active Matrix Devices Posters

Thursday, May 16, 2024, 5:00 PM – 8:00 PM / San Jose Convention Center, Room 220A

P.1 - LTPO Technology for Low Power Consumption
  • Yuqing Wang, Xiujian Zhu, Mingwei Ge, Tao Tang, Zhisong Sun
    Kunshan Govisionox Optoelectronics Co., Ltd. Kunshan China

  • Xiaoping Tan, Jiting Huang, Xingling Guo, Ningbo Wang
    Hefei Visionox Technology Co., Ltd. Hefei China


  • Low-temperature polycrystalline oxide (LTPO) is a hybrid backplane technology that combines low-temperature polycrystalline silicon and oxide-based TFT (thin-film transistor). It is also one breakthrough technology that achieves ultra-long standby time and stable battery life. This paper mainly discusses the key technical points of LTPO power saving from driver IC technology and screen technology solutions, and also introduces the mass production results of Visionox's LTPO technology, demonstrating the great potential of LTPO in low power consumption.
P.2 - Investigation of High-Mobility Crystalline IGO TFT with Top-Gate Structure for LCD Application
  • Qian Haijiao, Shao Xianjie, Li Yanlong, Sun Zhilei, Zhang Youwei, Lv Yujie, Gu Honggang, Wang Zhangtao
    Nanjing BOE Display Technology Corporation Nanjing China


  • This paper reports a study of electrical characteristics and bias temperature stress (BT) stability for a crystalline indium-gallium oxide (IGO) dual-gate thin-film transistor (TFT) with top-gate structure. A TFT with normalized Ion over 100µA and PBTS/NBTIS of 0.35/-2.85V is successfully fabricated. By adjusting oxygen partial pressure (O2%) and substrate temperature, it is possible to control the wet etching rate (WER) of as-deposited IGO film. After post annealing, crystalline IGO containing In2O3 phase with preferred orientation of (222) is formed. The TFT characteristics' uniformity and BT stability are found to depend on parameters of gate insulator (GI) deposition and pre-treatment before GI. Based on experimental results, the authors propose a high GI deposition temperature associated with low N2O plasma treatment power as the optimal condition for industrial production of crystalline IGO TFT.
P.4 - The Technology of High-Mobility Oxide TFT for 14-inch AMOLED Display
  • Zhuo Li, Seung Woo Han, Feng Juan Liu, Xuan Feng, Ming Hua Xuan
    BOE Technology Group Co., LTD. BeiJing China


  • The authors introduce high-mobility oxide-TFT technology, which is over 50 cm2/Vs. A 14-in. AMOLED panel with a resolution of 2,880 x 1,800 and a refresh frequency of 1~144Hz is driven by oxide TFT, including pixel circuits and gate driver circuits, to decrease the cost of the panel. Tandem OLED reduced panel power consumption.
P.5 - 27-inch Ultra-Narrow-Border LCD with a Two-Stage Output Gate Driver Circuit
  • ZhiXin Sun
    Peking University Shenzhen Graduate School Shenzhen China

  • Xu Wang, XiaoJin He, ZhiWei Tan
    TCL China Star Optoelectronics Technology Co., Ltd. Shenzhen China

  • Hang Zhou
    Peking UniversityPeking University Shenzhen Graduate School Shenzhen China


  • A two-stage output gate driver circuit with a clock-controlled inverter is proposed and investigated. High and low voltage switching of the inverter diminishes the positive bias stress of amorphous silicon TFTs in the circuit. The design of one cell with two-stage output reduces the number of blocks in the gate driver circuit by half. This circuit is successfully developed for a 27-in. LCD product with a 1.88mm border.
P.6 - Redefining Pixel Circuit Analysis: Causal Discovery and Probabilistic Modeling
  • Kyongtae Park
    Samsung Display Co., Ltd. Suwon South Korea

  • Cheondeck Park, Dongso Kim, Jaewoong Kim
    Samsung Display Co., Ltd. Yongin South Korea


  • A methodology combining explainable AI (XAI) with traditional machine learning to analyze complex pixel circuit design is introduced. Using SHapley Additive exPlanations (SHAP) values and constructing a directed acyclic graph (DAG), the approach improves accuracy in identifying causal influences, demonstrating the effectiveness of the methodology.
P.7 - A High-Resolution Design Methodology for Organic Photo-Diode Sensor Integration
  • Taehyun Kim, Jungsuk Bang, Dongil Yoo, Myunghun Lim, Yongwoo Lee
    Samsung Display Yongin South Korea


  • In order for an organic photo diode (OPD) to be integrated into a panel, high-resolution design technology is required. The design space explorer (DSE) makes various placements by changing the location and rotation of signal lines and devices, and makes optimal routing. The authors propose that in order to reduce searching time and parasitic capacitance, the search priority is adjusted by high-resolution prediction models. In addition, a routing model is proposed to avoid congestion of routes and to search for a route that minimizes overlapping areas between signal lines. Therefore, it is possible to find a layout that can reduce design areas by various placements and routes.
P.8 - Distinguished Paper: Realization of Dynamic Local Refresh on LCD with Novel Partial Scan GOA
  • Dongchuan Chen, Tao Yang, Xibin Shao, Dong Liu, Yingmeng Miao, Wenpeng Ma, Yinlong Zhang, Yanping Liao, Seungmin Lee, Zhangtao Wang, Yingying Qu
    Beijing BOE Display Technology Co., Ltd. Beijing China


  • The authors propose an arbitrary position dynamic local refreshing display technology with a new GOA structure as well as new TCON and driver IPs to generate GOA and data timing sequences that can initiate pixel line scans at any line and implement refreshing at different frequencies in different regions, breaking the limitation of line-by-line scanning of conventional GOA. The power consumption of GOA and data drivers can be saved by up to ~50% respectively for now.
P.9 - Integrated Ambipolar a-Si TFT with Active Pixel-Sensing Array Applied for Ambient Color Temperature and UV Sensing
  • Yi-Cheng Yuan, Ya-Hsiang Tai, Hsu-En Tsai
    National Yang Ming Chiao Tung University Hsinchu Taiwan Roc

  • Yu-Ying Tang, Chih-Chang Lai, Ching-Chun Lin, Yi-Ting Chung, Chih Peng
    Novatek Microelectronics Corp. Hsinchu Taiwan Roc


  • The authors integrate ambipolar a-Si TFT with an active-sensing pixel array for ambient color temperature and UV light intensity estimation. The algorithm calculates color temperature using RGBW data, while UV intensity is estimated using effective UV-blocking ITO glass. Experimental results confirm the system is suitable for multicolor sensing across diverse applications.
P.10 - Cost-Effective Solution for Low Gray-Level Performance in MicroLEDs Driven by PWM Using Machine Learning
  • Wei-Lin Wu, Jun-Wei Wu, Ya-Hsiang Tai
    National Yang Ming Chiao Tung University Hsinchu Taiwan Roc


  • A novel concept of "cutoff gray-level" is introduced for evaluation of microLED PWM pixel circuits at low gray-level with consideration of gamma correction and device variation. Additionally, a cost-effective two-level dithering method is proposed and machine learning is used to establish its algorithm.
P.11 - High-Mobility BCE Oxide TFT Technology for Demux Driving Notebook LCD
  • Ming-Jiue Yu, Shi-Min Ge, Zhi-Hui Cai, Wei Wu, Zhi-Xiong Jiang, David Park, Shan Li, Zhong-Jing Hsieh, Jun-Cheng Xiao
    Guangzhou China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Guangzhou China


  • Ln-IZO is used as a channel layer in amorphous Ln-In-Zn-O thin-film transistors. The device shows high mobility (35.4 cm2/Vs) and small voltage shifts (1.1/-1.5 V) of positive bias temperature stress (PBTS) and negative bias temperature illumination stress (NBTIS). The authors fabricate a 14-in. notebook liquid-crystal display (LCD).
P.12 - Improve the Reliability of a-IGZO TFT Through Optimizing the Threshold Voltage and Channel Thickness in AMOLED Hybrid Backplane
  • Dongliang Yu, Ying Shen, Yunhai Wan, Wenzhi Fan, Weibin Zhang
    Visionox Technology Inc. Hefei China


  • The threshold voltage of a-IGZO TFT is tuned by regulating the O2/Ar ratio during sputtering. Vth increases with the increase of O2/Ar ratio, while the PBTI performance deteriorates. The relationship between Vth and PBTI provides reference for mass production. Further, a thinner a-IGZO channel layer can achieve improved PBTI performance.
P.13 - Excessive Oxygen-Induced Threshold Voltage Shifts in High-Mobility Top-Gate PrIZO TFTs
  • Yu-Hua Dong, Shi-Min Ge, Zhi-Hui Cai, Dong Yuan, Ming-Jue Yu, Zi-Kang Pan, Shan Li, David Park, Zhong-Jing Xie, Jun-Cheng Xiao
    Guangzhou China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Guangzhou China


  • A top-gate self-alignment (TGSA) praseodymium-doped indium zinc-oxide (PrIZO) thin-film transistor (TFT) is fabricated. A high field-effect mobility of 40.83 cm2 V-1 s-1 is obtained by regulating the GI and ILD parameters. The devices show excellent stability with PBTS of 0.52 V and NBTIS of -0.9 V.
P.14 - High Mobility and High Light Stability Oxide Back-Channel-Etched TFT and Application to High-End LCD NB Production
  • Jie Huang, Guangcai Yuan, Zhengliang Li, Ce Ning, Rui Huang, Detian Meng, Feifei Li, Xu Fu, Hehe Hu
    BOE Technology Group Co., Ltd. Beijing China

  • Zhonghao Huang, Xu Wu, Zhiyong Ning, Rui Wang, Yutong Yang
    Chongqing BOE Optoelectronics Technology Co., Ltd. Chongqing China


  • A high mobility (29 cm2/Vs) and high light stability oxide thin-film transistor (TFT) with an 8-mask back-channel-etched (BCE) structure is fabricated. Remarkable enhancement in negative gate-bias thermal stress with illumination is achieved. A 16.0-in. WQHD 240Hz LCD NB is developed.
P.15 - Back-Channel Effect in Low-Temperature Poly-Si Thin-Film Transistors
  • Ying Shen, Xiaojing Liu, Xiaoxiao Guo, Weibin Zhang, Xiujian Zhu
    Hefei Visionox Technology Co., Ltd. Hefei China


  • This paper addresses the mechanism of the back-channel effect on thin-film transistors (TFTs) and proposes novel methods for characterizing and improving the stability of driving TFT devices, including back-channel and back-voltage testing. In comparison to routine sticking image and negative bias temperature stress testing, the authors' methods aim to minimize the impact of intrinsic material fluctuations, allowing for independent measurement of the back-channel effect on TFT device electrical characteristics. The authors also offer an enhanced option (N2 plasma treatment of PI surface) that has been used to better the performance of products.
P.16 - A Novel Driving Scheme to Achieve Low Frame Rate and Low Power Consumption with Narrow Border
  • Lu Huiling
    Kunshan New Flat Panel Display Technology Center Co. Kunshan China

  • Liu Jintao , Hu Siming, Wu Yong, Gao Xiaoyu
    Kunshan Govisionox Optoelectronics Co. Kunshan China


  • To improve the display effect at low illumination of a low-frame-rate display, two sets of scan driving circuits must be adopted. Therefore, the border must be widened to place two sets of scan driving circuits and one set of emit circuits, which conflicts with the need for a narrow border for AMOLED displays. In this paper, a novel driving architecture that places two set of circuits alternatively by one side is proposed to achieve the low frame rate and narrow border at the same time.
P.17 - Development of Vertical Oxide Channel Thin-Film Transistor Based on Hard-Mask Etching
  • Binbin Tong, Rui Huang, Lizhong Wang, Jinchao Zhang, Tianmin Zhou, Pengfei Gu, Ce Ning, Guangcai Yuan
    BOE Technology Group Co. Ltd Beijing China


  • This paper demonstrates a fabrication process of reliable vertical oxide channel thin-film transistor (TFT) based on a novel hard-mask etching scheme. The device characteristics of vertical 400nm channel length TFT can reach the same level of traditional TFT. The threshold voltage (Vth) is 0~0.5V and the on-state current can reach 10-5A.
P.18 - A Novel Ultra Low-Loading Gate Driver Circuit for 14-in. 2.8K OLED Display
  • YingHsiang Tseng, Qi Wang, Lina Xiao, Jie Liu, Zhichao Yu
    Everdisplay Optronics Corporation Shanghai China


  • Recently there is an increasingly high demand for organic light-emitting diode (OLED) panels to develop corresponding shift register driver circuits for pixel circuits. This has become important research in the field of OLED panel design. This paper proposes 10 thin-film transistors (TFTs) and 2 capacitor component driver circuits that have higher tolerance and better reliability regarding fluctuations such as display screen process, IC power signal noise, and long-term operation.
P.19 - High Mobility and Reliability Oxide Stacked TFT for Application to Next-Generation Display
  • Chuanbao Luo, Jiangbo Yao, Wei Ding, Kai Zhou, Juan Liu, Nian Liu, Xiaojun Zhan, Xin Zhang
    TCL China Star Optoelectronics Display Technology Co., Ltd. Shenzhen China


  • The authors show an 8-mask-count stacked TFT-array process using the first semiconductor layer overlapped with the source and drain layer directly. The device mobility is 25.4 cm2/Vs, and the Vth shift under the positive bias stress of 30V and negative bias temperature illumination stress of -30V for 1 h is +0.41V and -0.13V.
P.20 - Memory Window and Endurance Improvement of In-Ga-Zn-O-Based Ferroelectric Thin-Film Transistors by Inserting In-Ga-Zn-O Floating Gate
  • SeungYoon Shin, Yuseong Jang, Junhyeong Park, Soo-Yeon Lee
    Seoul National University Seoul South Korea


  • The authors prepare oxide semiconductor-based ferroelectric thin-film transistors (FeTFTs) with a floating gate for memory application. Depositing oxide semiconductor on HfZrOx (HZO) as a floating gate successfully induces a polar orthorhombic phase with a larger memory window and higher endurance than conventional floating-gate material TiN.
P.21 - Post-Annealing Optimization for Top-Gate Amorphous In-Ga-Zn-O Thin-Film Transistors with Atomic-Layer-Deposited Ultrathin AlOx Dielectric
  • Jiye Li, Huan Yang, Xiao Li, Xinwei Wang, Lei Lu, Shengdong Zhang
    Peking University Shenzhen China

  • Yuqing Zhang
    Hong Kong University of Science and Technology Hong Kong Hong Kong


  • The effects of post-annealing on amorphous InGaZnO (a-IGZO) TFTs with an ultrathin atomic-layer-deposited (ALD) AlOx gate insulator (GI) are investigated. The non-annealed devices exhibit uncontrollable gate leakage current, while post-annealing in either oxygen (O2) or nitrogen (N2) exhibits noticeable improvements. Optimizing O2-annealed devices demonstrate the most optimal performance, including a low subthreshold swing of 61.6 mV/dec and a high on/off current ratio over 109. Capacitance-voltage and X-ray photoelectron spectroscopy analyses further reveal the underlying mechanism of defect elimination at the AlOx/a-IGZO interface.
P.22 - Fabrication of Ultra-Short-Channel Oxide Thin-Film Transistors
  • Jiangbo Yao
    South China University of Technology Guangzhou China

  • Nian Liu, Juan Liu, Chuanbao Luo, Xin Zhang
    Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Shenzhen China


  • The authors have successfully developed short-channel top-gate amorphous InGaZnO4 thin-film transistors (TG a-IGZO TFTs) at Gen4.5. They optimize the uniformity and drain-induced barrier lowering, achieving short-channel TFTs with channel lengths of 1.3 um, Vth of -0.03V, mobility of 9.77 cm2/Vs, and DIBL of 29 mV/V, and successfully make a demo of a 7.1-in. miniLED.
P.23 - Low-Power A-PWM µLED Pixel Circuit of Progressive Mode Using Single-Sweep Signal for Mobile Displays
  • Yuxuan Zhu, Zhibang Song, Lingxiao Qian, Xin Zheng, Congwei Liao, Shengdong Zhang
    Peking University Shenzhen China


  • An analog pulse-width-modulation (A-PWM) microLED (µLED) pixel circuit based on low-temperature-polysilicon (LTPS) thin-film transistors (TFTs) for mobile displays is proposed. The progressive-emission mode is implemented using a single sweep (SW) signal by in-pixel logic operation circuits. By adjusting the emission time of the progressive-emission mode, the µLED is biased with the maximum quantum efficiency (EQE). Consequently, the static power consumption of proposed pixels is reduced by 29.2%, compared with conventional schemes.
P.24 - Ultra-Low-Power Consumption Notebook LCD with High On-State Current Metal-Oxide Device
  • Ce Ning, Dongfang Wang, Guangcai Yuan, Lizhong Wang, Fengjuan Liu, Hongda Sun, Yuhang Lu, Xue Dong
    BOE Technology Group Co., Ltd. Beijing China

  • Jiayu He, Yong Ma, Yunzhi Lin, Zhen Zhang, Peirou Li
    BOE Technology Group Co., Ltd. China

  • Xianjie Shao, Honggang Gu, Haijiao Qian, Fan Yang, Xianlei Wang, Yulin Sun
    Nanjing BOE Display Technology Co., Ltd. China


  • A new demo can significantly reduce power consumption by 65%, from 2.1 W to 1.27 W at a refresh rate of 120Hz and brightness of 150 nits. In addition, it has an ultra-high transmittance of more than 9.5%, a narrow bezel of 1.6 mm, high color saturation of sRGB 100% and good contrast ratio of more than 1,500:1. The new devices in this demo also show high on-state current of more than 35uA, good uniformity of ΔVth 1.03V, and PBTS 2.18V. This is a perfect guideline for low-power TFT-LCD products.
P.25 - Tailoring the Threshold Voltage Control of Oxide Thin-Film Transistors by Controlling Electron Injection Using PN Semiconductor Heterojunction Structure
  • Jung Hoon Han, Chihun Sung, Sung Haeng Cho, Sooji Nam
    Electronics and Telecommunications Research Institute Daejeon South Korea

  • Dong Yeob Shin, Kwun-Bum Chung
    Dongguk University Seoul South Korea

  • Byeong-Kwon Ju
    Korea University Seoul South Korea


  • The threshold voltage (VT) is the most important parameter in semiconductor devices. To control the VT of thin-film transistors (TFTs), the authors propose a heterojunction structure of p-type tellurium (Te) and n-type aluminum-doped indium-zinc-tin-oxide (Al:IZTO), which acts as an electron blocking layer and carrier transporting layer, respectively. They investigate the effect of adding the heterojunction layer on the Al:IZTO and demonstrate VT shift up to +20V by adjusting the thickness and single / double deposition of the heterojunction Te layer.
P.26 -  Low-Power MLED Pixel LTPS-Based Compensation Circuit
  • Yicheng Lin, Linfeng Li, Qiuhua Meng, Qingkai Zhang, Zeng Liang, Huanxin Yue, Sen Yan, Guofeng Hu, Bo Gao, Haiwei Sun, Lingyun Shi, Ming Chen
    BOE MLED Technology Co., Ltd. Beijing China


  • A novel LTPS-based compensation circuit is adopted to reduce power consumption, which is reduced by 16.63%, due to the special design set to reduce the source-drain voltage (Vds) of the DTFT. Furthermore, some signals are simultaneously set for the entire panel to eliminate color shift and screen-tearing problems. The novel circuit is suitable for MLED splicing display products, which have less power consumption and can generate high-quality images with excellent gamma curves.
P.27 - Multi-Frequency Driving for Low-Power Consumption by New Scan Circuit
  • Feixiang Sun, Xiaoxia Zhang, Heng Xu, Huichen Xie, Cheng Chen, Yuanchun Wu
    Wuhan China Star Optoelectronics Semiconductor Display Technology Corporation Wuhan China


  • In the display industry, dynamically adjusting the frame rate of the screen has become an important method to reduce power consumption. Currently, there is still unnecessary power consumption in GOA circuits through this method. To reduce the power consumption, the authors propose a GOA circuit with two control signals to achieve different frequencies in different regions. The circuit can not only control whether the Nscan signal is written into the active area to reduce source power consumption, but also control whether the Nscan signal is transmitted to reduce GOA power consumption. Compared to the high frame rate of the entire screen, this circuit can reduce 10% of GOA circuit power consumption and 17.7% of total IC power consumption.
P.28 - High-Speed Oscillator Using Polycrystalline InGaO TFTs by Spray Pyrolysis on Polyimide Substrate for Flexible Electronics
  • Md. Hasnat Rabbi, Arqum Ali, Jinbaek Bae, Abul Tooshil, Chanju Park, Jin Jang
    Kyung Hee University Seoul South Korea


  • The authors demonstrate high-performance coplanar thin-film transistors (TFTs) on polyimide (PI) substrate, with very thin polycrystalline InGaO (poly-IGO) thin films deposited by spray-pyrolysis. The TFTs exhibit saturation mobility (µSAT) of ~39.25 ± 0.73 cm2V-1s-1, with excellent uniformity and stable bias stabilities (ΔVTH = +0.3 V for PBTS, ΔVTH = -0.3 V for NBTS).
P.29 - A Bias TFT with High Photosensitive Current for Optical Sensors
  • Chuanxiang Xu, Qi Yao, Jinchao Zhao, Bin Qin, Liuqing Li, Liwei Liu, Shi Shu, xinhua Liu, Guangcai Yuan
    BOE Technology Group Co., Ltd. BeiJing China


  • A photosensitive TFT sensor called a bias TFT is fabricated using a simple amorphous silicon process. The photosensitive current of bias TFT is linearly related to the brightness of the top light source and inversely proportional to the size of the bias region. The photosensitivity current can be up to 10E-8 amperes under 100-nits illumination. Among four shapes of bias TFTs, L-type TFTs have the highest photo current.
P.30 - Effect of High-k Oxide Materials on Amorphous Indium-Gallium Zinc-Oxide (a-IGZO) Channel in Top-Gate Field-Effect Transistors
  • Reem Alshanbari, Oliver Durnan, Huaiqia Guo, Ioannis Kymissis
    Columbia University New York NY US

  • Moshe Eizenberg
    Technion–Israel Institute of Technology Haifa Israel


  • The gate dielectric plays a significant role in improving the electrical performance of field-effect transistors (FETs). Here, the authors integrate a high-k dielectric with (~10 nm) amorphous indium-gallium zinc-oxide (a-IGZO) FET with different gate dielectrics PECVD (SiO2 and Si3N4). Their results show that a-IGZO FET with optimized HfO2/SiO2 dielectrics has superior electrical performance with field-effect mobility (50 cm2 V-1 s-1) and on-current of 10-6 A, and an off-current value of 10-13 A under 0.1 VDS without any dielectric leakage. These results support the idea that increasing the gate capacitance density will improve the electrical performance and material conductivity.
P.31 - Investigation on Driving Backboard of Electronic Paper Based on Low-Temperature Polycrystalline Silicon
  • Yu Jin
    Visionox Technology Inc. Kunshan China

  • Wenzhi Fan
    Visionox Technology Inc. Hefei China

  • Wenjie Xu, Weiqi Xu, Xiaoyu Gao, Zhiyi Zhou, Lei Xu, Shuilin Xie, Dongliang Yu, Feiyue Cheng, Jianqiu Sun, Weijie Gu
    Visionox Technology Inc. China


  • In this work, the authors report a systematic investigation of an LTPS-based driving backboard of electronic paper. Ultimately, they combine an optimal fabricating process for LTPS-TFTs with a 2T2C driving circuit design scheme to produce an electronic paper with outstanding performance.
P.32 - Dual-Gate Amorphous Silicon Thin-Film Transistor Technology for High Brightness and High-Frame-Rate Outdoor Displays
  • Zhichao Zhou, Xiaoliang Zhou, Lei Qiao, Zhongjie Liu, Zhiwei Tan
    Shenzhen China Star Optoelectronics Co., Ltd Shenzhen China

  • Yiyi Zhu
    The Hong Kong University of Science and Technology Hong Kong China


  • The authors present the development of a dual-gate (DG) architecture for hydrogenated amorphous silicon thin-film transistors (a-Si:H TFTs). The aim is to address the challenges of low on-state current (Ion) and light-induced degradation in traditional single-gate (SG) TFTs. The experimental results demonstrate that the DG-TFT exhibits significantly higher Ion compared to the SG-TFT, and the improvement depends on the thickness of the top gate insulator. Additionally, the threshold voltage (Vth) can be adjusted by applying the top gate voltage, allowing for a full-swing modulation coefficient of approximately 0.2. To ensure long-term stability, a light-blocking layer is  incorporated as the top gate electrode, enabling the DG-TFT to maintain its initial properties even under intense illumination conditions of up to 28,000 nits.
P.222 Late-News Poster: Performance of Double Gate p-ch Cu-MIC Poly-Ge TFTs on Flexible Plastic Substrates and Their Feasibility for CMOS Inverter
  • Akito Kurihara, Sho Suzuki, Akito Hara
    Tohoku Gakuin University Miyagi Japan

  • Toshiyuki Tsuchiya, Tetsuo Okuyama
    TOYOBO Co., Ltd Shiga Japan


  • This study fabricates p-ch double-gate (DG) poly-Ge TFTs at 385°C on flexible plastic bonded to glass substrates. The TFTs are crystallized through metal-induced crystallization using copper (Cu-MIC). They have an Ion/Ioff ratio of 4 × 103 and a mobility of 8.3 cm2/Vs. To check the feasibility of using these DG Cu-MIC poly-Ge TFTs for CMOS on plastic substrates, the authors fabricate both n-ch and p-ch TFTs on a glass substrate at 400°C, which is a suitable temperature for a plastic substrate, and operate a CMOS inverter after wiring the TFTs.
P.223 Late-News Poster: Alleviating Gamma Curve OLED Device with Inductor by AC Driving
  • Jincheol Jang, Jae-In Yoo, Vitaly Panov, Hyo-Bin Kim, Sung-Cheon Kang, Eun-Young Choi, Jang-Kun Song
    Sungkyunkwan University Suwon South Korea


  • This study integrates an inductor into OLED structures to overcome challenges in low gray-level expression. At the resonance frequency of 19 kHz, a linear correlation between voltage and emission intensity emerges, resulting in a significant decrease in turn-on voltage. This method can make an alleviating gamma curve.
P.224 Late-News Poster: Development of 660Hz LCD with Low-Resistance-Gate LTPS Backplane
  • Pei-Ying Lu, Jia-Hong Ye, Ching-Liang Huang, Yi-Ting Lin, Wei-Zhong Lin, Yi-Fan Jiang, Hsiu-Chun Hsieh, Hsin-Chun Huang, Chun-Lung Huang, Liang-Yin Huang, Cheng-Hsien Liao, Jenn-Jia Su, Yang-An Wu
    AUO Corporation Hsinchu Taiwan Roc


  • A 16-in. full high-definition plus (FHD+) 1,920 x 1,200 LCD featuring LTPS TFTs with a new low-resistance alloy gate metal and fast-response advanced fringe-field switching (AFFS) liquid-crystal technology has been developed, which achieves a ClearMR value of 9,000 at 480Hz frame rate and fulfills the requirement for product reliability testing. These technologies, including the new gate metal TFTs and employing fast-response time liquid crystal, have also been implemented in a 17.3-in. FHD 1,920 x 1,080 gaming laptop LCD. This larger panel operates at an even higher frame rate of 660Hz and higher ClearMR values with gray-to-gray (GtG) liquid-crystal response time within 1 ms. These advancements mark significant progress in the field of high-performance gaming displays.
P.225 Late-News Poster: Improving Specific Contact Resistivity of a-IGZO Thin-Film-Transistors via Multi-Stack Interlayer
  • Joo Hee Jeong, Seong Hun Yoon, Jae Kyeong Jeong
    Hanyang University Seoul South Korea

  • Taikyu Kim
    Korea Institute of Science and Technology Seoul South Korea


  • The authors report the effects of sputter-based multi-stack interlayer on the electrical contact properties of a-IGZO TFTs. The a-IGZO TFTs with a multi-stack interlayer of TiN and IGTO show remarkable outcomes, including the lowest specific contact resistivity (ρC) and the highest field-effect mobility ((μFET). This research suggests a highly effective approach to reduce the contact resistivity of oxide semiconductors by nearly two orders magnitude.
P.226 Late-News Poster: Compact AMOLED Pixel Circuit Employing Double-Gate TFT Achieving High Threshold Voltage Compensation Accuracy
  • Minji Kim, Kyeong-Soo Kang, Ji-Hwan Park, Chanjin Park, Soo-Yeon Lee
    Seoul National University Seoul South Korea


  • This paper proposes a compact active-matrix organic light-emitting diode pixel circuit using a double-gate oxide thin-film transistor (TFT). Due to the multifunctional characteristics of double-gate TFT, the threshold voltage could be compensated more efficiently. The simulation shows better compensation performance in the proposed circuit than in one with only single-gate TFT.