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Session
6
: AMOLED Driving TFTs |
Active Matrix Devices
|
Tuesday, May 14 / 11:10 AM - 12:30 PM / San Jose Convention Center, LL21EF
Chair:
Kalluri Sarma, Display Technology Consulting, Phoenix, AZ US
Co-Chair:
Norbert Fruehauf, University of Stuttgart, Stuttgart, Germany
6.1 - Pragmatic Low-Temperature Polycrystalline Thin-Film Transistor Technologies for High-Brightness and High-Temperature Environments in AMOLED Displays (11:10 AM - 11:30 AM)
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Keunwoo Kim, Tien Nguyen Thanh, Bummo Sung, Jiyeong Shin, Dokyeong Lee, Keunho Jang, Changhee Lee
Samsung Display Yongin South Korea
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This paper presents experimental and theoretical analysis of recent process-based low-temperature polysilicon (LTPS) thin-film transistors in AMOLED displays. All off-state current components, which include gate-induced drain leakage, thermal generation, and photo-generation currents, are analyzed in detail. The authors investigate optimal device and process design for reliable LTPS technologies in high-brightness and high-temperature situations.
6.2 - High Subthreshold Swing a-IGZO Driving TFTs Without Mobility Degradation for Low-Gray-Level Image Quality Improvement in Active-Matrix OLED (11:30 AM - 11:50 AM)
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Soobin An, Junhyeong Park, Jinkyu Lee, Yumin Yun, Soo-Yeon Lee
Seoul National University Seoul South Korea
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In this paper, high subthreshold swing (SS) amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) are fabricated using a sputtered Al2O3 layer, which is deposited on an active layer of the conventional bottom-gate a-IGZO TFTs and patterned using photolithography. By optimizing the Al2O3 layer, high SS without mobility degradation can be achieved.
6.3 - Development of Internal Compensation Technology for Medium-Size OLED Display Based on Oxide TFTs (11:50 AM - 12:10 PM)
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Pan Xu, Ying Han, Mingyi Han, Linlin Wang, Donghui Zhao, Xing Zhang, Chengyuan Luo, Guangshuang Lv, Tianji Li, Yongqian Li, Jianwei Yu
Hefei BOE Joint Technology Co., Ltd. & BOE Technology Group Co., Ltd. Beijing China
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Hao Zhang, Xue Dong
BOE Technology Group Co.,Ltd. Beijing China
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Fengjuan Liu, Guang Yan, Haoran Wang
BOE Technology Group Co., Ltd. Beijing China
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To develop internal compensation for a medium-size OLED display with high resolution, heavy RC load, and high refresh rate based on oxide TFTs, the researchers employ a new PWM-GOA circuit and a new scan-GOA circuit. They successfully demonstrate stable 6-in. panels.
6.4 - Invited Paper: Improvement of Low-Temperature Polysilicon AMOLED Pixel Circuit with Independent Threshold Voltage Detection (12:10 PM - 12:30 PM)
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Lujiang Huangfu, Jianchao Zhu, Xuliang Zhao, Jiangnan Lu, Libin Liu, Shiming Shi
BOE Technology Group Co., Ltd. Beijing China
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There are a few inherent problems in pixel circuits with independent Vth detection. A prominent issue currently is the interference of voltage fluctuation on the data bus on the Vth detection. Based on the analysis of the issue, a countermeasure scheme and a corresponding improved pixel circuit are proposed.