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Session 22 :
Novel Structure
Active Matrix Devices

Tuesday, May 14 / 03:40 PM  - 5:00 PM / San Jose Convention Center, LL21EF

Chair:
Jin-Seong Park, Hanyang University, Seoul, South Korea

Co-Chair:
Takashi Nakamura, Japan Display Inc., Chiba, Japan

22.1 - Invited Paper: About a Trench Oxide TFT (3:40 PM - 4:00 PM)
  • Do Hyung Kim, Junsung Kim, Young Jun Im, Sang-Hee Park
    Korea Advanced Institute of Science and Technology Daejeon South Korea


  • The authors introduce a new structure of oxide TFT, providing high current in a small footprint and suitable Von. The trench TFT consists of a lateral region of high current path and two thin vertical channels. This can suppress not only channel shortening, but also negative Von shift of high current driving oxide TFT.
05/14/2024 3:40 PM 05/14/2024 4:00 PM America/Los_Angeles About a Trench Oxide TFT The authors introduce a new structure of oxide TFT, providing high current in a small footprint and suitable Von. The trench TFT consists of a lateral region of high current path and two thin vertical channels. This can suppress not only channel shortening, but also negative Von shift of high current driving oxide TFT. San Jose McEnery Convention Center LL21EF Do Hyung Kim, Junsung Kim, Young Jun Im, Sang-Hee Park
22.2 - Significant Improvement of a-IGZO Source-Gated Transistor Current over Traditional Design Through Architecture Modification (4:00 PM - 4:20 PM)
  • Pongsakorn Sihapitak, Juan Paolo Bermundo, Yukiharu Uraoka
    Nara Institute of Science and Technology Nara Japan


  • The authors introduce a new architecture, alternative double work function (a-DWF), a device to dramatically enhance the output current of source-gated transistors (SGTs) while retaining low-voltage saturation. The a-DWF can finely tune its characteristics and is a promising candidate as an alternative structure for displays.
05/14/2024 4:00 PM 05/14/2024 4:20 PM America/Los_Angeles Significant Improvement of a-IGZO Source-Gated Transistor Current over Traditional Design Through Architecture Modification The authors introduce a new architecture, alternative double work function (a-DWF), a device to dramatically enhance the output current of source-gated transistors (SGTs) while retaining low-voltage saturation. The a-DWF can finely tune its characteristics and is a promising candidate as an alternative structure for displays. San Jose McEnery Convention Center LL21EF Pongsakorn Sihapitak, Juan Paolo Bermundo, Yukiharu Uraoka
22.3 - Negative-Capacitance ZAO/ZnO Ferroelectric Thin-Film Transistor for Neuromorphic Computing (4:20 PM - 4:40 PM)
  • Md Mobaidul Islam, Myeonggi Jeong, Arqum Ali, Jinbaek Bae, Samiran Roy, Jin Jang
    Kyung Hee University Seoul South Korea


  • The authors report complementary metal-oxide semiconductor (CMOS)-compatible, negative-capacitance (NC) ferroelectric (FE) zirconium-aluminum oxide (ZAO)/ZnO thin-film transistors (TFTs) at a low thermal budget of 360°C. The NC-FE-TFTs demonstrate a high memory window of 6.7 ± 0.1 V and a steep subthreshold swing of 43 ± 4 mV dec-1, with negative differential resistance at room temperature.
05/14/2024 4:20 PM 05/14/2024 4:40 PM America/Los_Angeles Negative-Capacitance ZAO/ZnO Ferroelectric Thin-Film Transistor for Neuromorphic Computing The authors report complementary metal-oxide semiconductor (CMOS)-compatible, negative-capacitance (NC) ferroelectric (FE) zirconium-aluminum oxide (ZAO)/ZnO thin-film transistors (TFTs) at a low thermal budget of 360°C. The NC-FE-TFTs demonstrate a high memory window of 6.7 ± 0.1 V and a steep subthreshold swing of 43 ± 4 mV dec-1, with negative differential resistance at room temperature. San Jose McEnery Convention Center LL21EF Md Mobaidul Islam, Myeonggi Jeong, Arqum Ali, Jinbaek Bae, Samiran Roy, Jin Jang
22.4 - Invited Paper: Fiber-Like Oxide Thin-Film Transistors for Large-Area Smart Textile Systems (4:40 PM - 5:00 PM)
  • Pedro Barquinha, Cátia Figueiredo, Rui Igreja, Joana Pinto, Rodrigo Martins
    NOVA School of Science and Technology (NOVA FCT) & NOVA University Lisbon Caparica Portugal

  • Roberto Momentè
    SAATI Appiano Gentile (CO) Italy

  • Petar Jovancic
    Eurecat, Centre Tecnológic de Catalunya, Unitat de Teixits Funcionals Mataró Spain

  • Sanghyo Lee
    Kumoh National Institute of Technology (KIT) Gumi South Korea

  • Hyung Woo Choi, Luigi Occhipinti, Jong Kim
    University of Cambridge Cambridge United Kingdom


  • This work demonstrates flexible and textile electronic concepts bridged to create innovative and free form-factor textile electronic systems. In particular, it focuses on oxide thin-film transistor development on fiber-like polymeric substrates to assure compatibility with weaving processes and interconnectivity with other fiber-based electronic components. 
05/14/2024 4:40 PM 05/14/2024 5:00 PM America/Los_Angeles Fiber-Like Oxide Thin-Film Transistors for Large-Area Smart Textile Systems This work demonstrates flexible and textile electronic concepts bridged to create innovative and free form-factor textile electronic systems. In particular, it focuses on oxide thin-film transistor development on fiber-like polymeric substrates to assure compatibility with weaving processes and interconnectivity with other fiber-based electronic components.  San Jose McEnery Convention Center LL21EF Hyung Woo Choi, Luigi Occhipinti, Jong Kim