Session and scheduling information are listed below. Select a session from the list and press "Go" to view the abstracts for that session.
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Session
30
: Oxide TFT Innovations |
Active Matrix Devices
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Wednesday, May 15 / 09:00 AM - 10:00 AM / San Jose Convention Center, LL21EF
Chair:
James Chang, Apple, Inc., Cupertino, CA US
Co-Chair:
Man Wong, The Hong Kong University of Science & Technology, Clear Water Bay, Hong Kong
30.1 - Development of High-Integration HOP Panel with High Frequency and VRR Driving (9:00 AM - 9:20 AM)
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Hyeongseok Kim, Jun-Hyun Park, Minjae Jeong, Jangmi Kang, Soil Yoon, Mukyung Jeon, Gyungsoon Park, Sang Hwan Cho
Samsung Display Gyeonggi-do South Korea
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A new high-resolution (~500ppi) pixel circuit capable of driving a variable frequency of 240Hz is proposed. A high-speed operation and high-resolution HOP panel is manufactured by combining new stacked 2 caps PA, LPR, and indirect VRR technologies.
30.2 - Hydrogen Content-Controlled Silicon-Nitride Passivation Layer for Highly Reliable IGZO Thin-Film Transistor (9:20 AM - 9:40 AM)
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Bokyoung Lee, Yongil Kim, Jungho Bang, Seung Hee Nam, Ji Yong Noh, Kwon-Shik Park, Soo Young Yoon
LG Display Co. Paju South Korea
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To achieve a highly reliable IGZO transistor, a silicon-nitride thin-film passivation layer is extensively investigated, mainly due to readily available fabrication, along with good barrier performance. A larger amount of hydrogen residuals is observed in the PECVD-deposited SiNx passivation layer.
30.3 - Direct Observation of 2 Delta L in a-IGZO TFT Using Scanning Capacitance Microscopy (9:40 AM - 10:00 AM)
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Hyunsoo Lee, Woo-Geun Lee, Yu-Jin Kim, Kangnam Kim, Songhee Kim, Seongyeol Syn, Beom Jun Kim, Kapsoo Yoon
Samsung Display Asan South Korea
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A 2 delta L in a-IGZO TFT is investigated using a scanning capacitance microscopy (SCM) technique. Moreover, the difference of 2 delta L plays a key role in the properties of EL currents.