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Session 97 :
Active-Matrix Devices Late News
Active Matrix Devices

Friday, May 17 / 09:00 AM   - 10:20 AM / San Jose Convention Center, LL21AB

Chair:
Kenichi Takatori, Huawei Technologies Japan K.K., Tokyo, Japan

97.1 Late-News Paper: Mechanism for Irreversible Threshold Voltage Behavior by Polyimide Charging in Thin-Film Transistors (9:00 AM - 9:20 AM)
  • Do Hyung Kim, Min Ji Kim, Huiyeon Choe, Seulgi Lee, Bohwa Kim, Hyunsang Seo, Kiyoung Yeon, Nari Ahn
    Samsung Display Company Asan South Korea


  • Irreversible threshold voltage (Vth) shift by polyimide (PI) charging is experimentally demonstrated. The Vth of a device without PI electrode is positively moved during the release. Interestingly, the shifted Vth is not recovered to initial value up to one month. The mechanism for the irreversibility is suggested.
05/17/2024 9:00 AM 05/17/2024 9:20 AM America/Los_Angeles Mechanism for Irreversible Threshold Voltage Behavior by Polyimide Charging in Thin-Film Transistors Irreversible threshold voltage (Vth) shift by polyimide (PI) charging is experimentally demonstrated. The Vth of a device without PI electrode is positively moved during the release. Interestingly, the shifted Vth is not recovered to initial value up to one month. The mechanism for the irreversibility is suggested. San Jose McEnery Convention Center LL21AB Do Hyung Kim, Min Ji Kim, Huiyeon Choe, Seulgi Lee, Bohwa Kim, Hyunsang Seo, Kiyoung Yeon, Nari Ahn
97.2 Late-News Paper: Development of High-Mobility Indium-Rich IGZO TFT Device for IT OLED Display (9:20 AM - 9:40 AM)
  • Huyn-Min Cho, Chang-Il Ryoo, Pil-Sang Yun, Jong-Uk Bae, Yoo-Seok Park
    LG Display Paju South Korea


  • The researchers developed a high-mobility device by using indium (In-) rich a-IGZO. In the In-rich a-IGZO TFT process, a relatively large amount of oxygen is used compared to conventional a-IGZO (In:Ga:Zn 1:1:1) in order to control the variation of the threshold voltage (VTH) caused by high carrier concentration. The a-IGZO TFTs have excellent reliability characteristics while satisfying VTH dispersion and mobility by controlling the vertical and lateral distribution of oxygen and hydrogen.
05/17/2024 9:20 AM 05/17/2024 9:40 AM America/Los_Angeles Development of High-Mobility Indium-Rich IGZO TFT Device for IT OLED Display The researchers developed a high-mobility device by using indium (In-) rich a-IGZO. In the In-rich a-IGZO TFT process, a relatively large amount of oxygen is used compared to conventional a-IGZO (In:Ga:Zn 1:1:1) in order to control the variation of the threshold voltage (VTH) caused by high carrier concentration. The a-IGZO TFTs have excellent reliability characteristics while satisfying VTH dispersion and mobility by controlling the vertical and lateral distribution of oxygen and hydrogen. San Jose McEnery Convention Center LL21AB Huyn-Min Cho, Chang-Il Ryoo, Pil-Sang Yun, Jong-Uk Bae, Yoo-Seok Park
97.3 Late-News Paper: Enhanced IGZO TFT Performance with Atomic Layer Deposition Parameter Optimization for Large OLED Displays (9:40 AM - 10:00 AM)
  • Heung Jo Lee, Pil Sang Yun, Jong Uk Bae, Yoo Seok Park, Woo Sup Shin, Hyeon Woo Lee
    LG Display Co., Ltd. Paju South Korea

  • Jae Kyeong Jeong
    Hanyang University Seoul South Korea


  • The authors evaluate the applicability of a-IGZO thin films synthesized using atomic layer deposition (ALD) technology in the field of large-area OLED TVs. Their empirical data strongly demonstrate that the threshold voltage (Vth) stabilizes near 0.0 V and consistently achieves device mobility exceeding 15 cm²/Vs. In particular, this study shows that the variability of the Vth characteristics is less than ±0.1V and the mobility dispersion is less than ±1cm²/Vs.
05/17/2024 9:40 AM 05/17/2024 10:00 AM America/Los_Angeles Enhanced IGZO TFT Performance with Atomic Layer Deposition Parameter Optimization for Large OLED Displays The authors evaluate the applicability of a-IGZO thin films synthesized using atomic layer deposition (ALD) technology in the field of large-area OLED TVs. Their empirical data strongly demonstrate that the threshold voltage (Vth) stabilizes near 0.0 V and consistently achieves device mobility exceeding 15 cm²/Vs. In particular, this study shows that the variability of the Vth characteristics is less than ±0.1V and the mobility dispersion is less than ±1cm²/Vs. San Jose McEnery Convention Center LL21AB Jae Kyeong Jeong
97.4 - Visible Light Detection Enhancement of Indium-Gallium Zinc-Oxide Phototransistor with a Formation of p-n Junction Using PEDOT:PSS Absorption Layer (10:00 AM - 10:20 AM)
  • Dong Keun Lee, Jong Hyuk Ahn, Jong Bin An, Sung Min Rho, Kyung Min Kim, Hyun Jae Kim
    Yonsei University Seoul South Korea


  • In this paper, an indium-gallium-zinc oxide (IGZO) based phototransistor with an electrohydrodynamic (EHD) jetprinted poly (3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) absorption layer has been developed for the absorption of visible light. The PEDOT:PSS absorption layer forms a p-n junction with IGZO, enhancing the photoresponse through effective carrier transfer of photogenerated carriers.
05/17/2024 10:00 AM 05/17/2024 10:20 AM America/Los_Angeles Visible Light Detection Enhancement of Indium-Gallium Zinc-Oxide Phototransistor with a Formation of p-n Junction Using PEDOT:PSS Absorption Layer In this paper, an indium-gallium-zinc oxide (IGZO) based phototransistor with an electrohydrodynamic (EHD) jetprinted poly (3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) absorption layer has been developed for the absorption of visible light. The PEDOT:PSS absorption layer forms a p-n junction with IGZO, enhancing the photoresponse through effective carrier transfer of photogenerated carriers. San Jose McEnery Convention Center LL21AB Dong Keun Lee, Jong Hyuk Ahn, Jong Bin An, Sung Min Rho, Kyung Min Kim, Hyun Jae Kim